これですよね。きっと。
Although I'm not sure about the フロアン -> フロ（－）マン

Multiplication mode bistable field effect transistor and memory ...3728695 granted Apr. 17, 1973 to Dov Frohman-Bentchkowsky is directed to a random-access floating gate MOS memory array. In US Pat. No. ...
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High data rate write process for non-volatile flash memories ...Dov Frohman-Bentchkowsky, "A Fully Decoded 2048-Bit Electrically Programmable FAMOS Read-Only Memory" (reprinted from IEEE J. Solid-State Circuits, vol. ...
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The Chip Collection - US Patent 4203158 - Smithsonian InstitutionDov Frohman-Bentchkowsky Jerry Mar George Perlegos William S. Johnson Filed December 15, 1978. Image of US PATENT 4203158 ...
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IEEE Jack A. Morton Award Recipientsl982 - DOV FROHMAN-BENTCHKOWSKY INTEL Elec., Jerusalem, Israel. 'For contributions to non-volatile semiconductor memories.' 1981 - NICK HOLONYAK, JR. ...
www.ieee.org/portal/pages/about/awards/pr/mortonpr.html -

Class of 1982 FellowsDOV FROHMAN-BENTCHKOWSKY. For development and understanding of programmable nonvolatile MOS memories. FRANCIS JOHN FRY. For pioneering contribution to the ...
www.ieee.org/portal/pages/about/awards/fellows/80s/1982.htm... -

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Note added at 3 hrs (2006-03-25 22:06:21 GMT)
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He was formerly known (just) as "Dov Frohman."
There's a stub about him in Wikipedia:

Dov Frohman - Wikipedia, the free encyclopedia Dov Frohman is an Israeli engineer and manager, best-known for inventing the EPROM. Dr. Dov Frohman is the inventor of the Electrically eraseable ...
en.wikipedia.org/wiki/Dov_Frohman -